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Schedule

Technical Program

The AVS 18th International Conference on Atomic Layer Deposition (ALD 2018) featuring the 5th International Atomic Layer Etching Workshop (ALE 2018) will be a three-day meeting dedicated to the science and technology of atomic layer controlled deposition of thin films and now topics related to atomic layer etching.  Since 2001, the ALD conference has been held alternately in the United States, Europe and Asia, allowing fruitful exchange of ideas, know-how and practices between scientists. This year, the ALD conference will again incorporate the Atomic Layer Etching 2018 Workshop (ALE 2018), so that attendees can interact freely. The conference will take place Sunday, July 29-Wednesday, August 1, 2018, at the Songdo Convensia in Incheon, South Korea.

As in past conferences, the meeting will be preceded (Sunday, July 29) by one day of tutorials and a welcome reception. Sessions will take place (Monday-Wednesday, July 29-August 1) along with an industry tradeshow. All presentations will be audio-recorded and provided to attendees following the conference (posters will be included as PDFs). Anticipated attendance is 600+.

Please use the ALD-ALE Mobile App for the most updated schedule.
You may also looks for changes on the signs outside of each session room.
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ALD & ALE Tutorial Speakers and Schedule

Sunday, July 29, 2018

1:00-1:05 Tutorial Welcome
1:05-1:50 “Challenges of ALD Applications in Memory Semiconductor Devices,” Choon Hwan Kim (SK Hynix, South Korea)
1:50-2:35 “Overview of ALD Precursors for Semiconductor Manufacturing and Its Development Challenges,” Wonyong Koh, (UP Chemical, South Korea)
2:35-3:20 “In situ Studies of ALD Processes and Reaction Mechanisms,” Erwin Kessels (Eindhoven University of Technology, The Netherlands)
3:20-3:40 Break
3:40-4:25 “Overview of Area Selective Atomic Layer Deposition,” Gregory N. Parsons (North Carolina State University, USA)
4:25-5:10 “Impact of ALE on Process Tool Design – a Tutorial,” Mike Cooke (Oxford Instruments, USA)
5:10-5:55 “Modeling and Simulation Approaches to Atomistic Control in Etch and Deposition Processes,” Peter L.G. Ventzek (TEL, USA)
View Tutorial Schedule & Abstracts

ALD & ALE Plenary Speakers and Schedule

Monday, July 30, 2018

8:15-8:30 ALD Opening Remarks
8:30-9:15 “Evolution of Memory Technology and Future Scaling Challenges,” Seung Ho Pyi (SK Hynix, South Korea)
9:15-10:00 “A Road to Damascus, ALD Technology,”
Jin-Sung Chun (Wonik IPS, South Korea)
10:00-10:30 Break
10:30-10:45 ALE Opening Remarks
10:45-11:30 “Semiconductor Manufacturer’s View and Entreaty to Atomic Layer Etcher,” Masayuki Tomoyasu (Samsung Electronics, South Korea)
11:30-11:45 ALD Innovation Award Presentation
11:45-12:00 Sponsor Preview
12:00-1:30 Lunch and Exhibits

ALD Invited Speakers

  • Jae-Young Ahn (Samsung Electronics, South Korea)
  • Sean Barry (Carleton University, Canada)
  • Mikhael Bechelany (IEM-CNRS, France)
  • Rong Chen (Huazhong University of Science and Technology, China)
  • Suk Jin Chung (Samsung Electronics)
  • Taek-Mo Chung (KRICT, South Korea)
  • John Conley (Oregon State University, USA)
  • Neil Dasgupta (University of Michigan, USA)
  • Christophe Detavernier (Ghent University, Belgium)
  • Shi-Jin Ding (Fudan University, China)
  • Hyungchul Kim (SK Hynix, South Korea)
  • Min Hwan Lee (University of California, Merced)
  • Adrie Mackus (Eindhoven University, The Netherlands)
  • David Munoz-Rojas (LMGP-CNRS, France)
  • TaeJoo Park (Hanyang University, South Korea)
  • Paul Poodt (TNO/Hoist Center, The Netherlands)
  • Yong Qin (Institute of Coal Chemistry, Chinese Academy of Sciences, China)
  • Xueliang Sun (University of Western Ontario, Canada)

ALE Invited Speakers

  • Sumit Agarwal (Colorado School of Mines)
  • Robert Bruce (IBM, USA)
  • Simon Elliot (Schrödinger, Ireland)
  • Masanaga Fukasawa (Sony Semiconductor Solutions Corp., Japan)
  • Hiroyuki Fukumizu (Toshiba, Japan)
  • Yoshihide Kihara (TEL, USA)
  • Jongchul Park (Samsung Electronics, South Korea)
  • Alex Schrinsky (Micron, USA)